Ferroelectric Random Access Memories: Fundamentals and Applications / Edition 1

by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto

Overview

The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.

Product Details

ISBN-13:	9783642073847
Publisher:	Springer Berlin Heidelberg
Publication date:	12/02/2010
Series:	Topics in Applied Physics , #93
Edition description:	Softcover reprint of hardcover 1st ed. 2004
Pages:	291
Product dimensions:	6.10(w) x 9.25(h) x 0.24(d)

Table of Contents

Part I Ferroelectric Thin Films: Overview.- Novel Si-substituted Ferroelectric Films.- Static and Dynamic Properties of Domains.- Nanoscale Phenomena in Ferroelectric Thin Films.- Part II Deposition and Characterization Methods: Sputtering Techniques.- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films.- Recent Development of Ferroelectric Thin Films by MOCVD.- Materials Integration Strategies.- Characterization by Scanning Nonlinear Dielectric Microscopy.- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs.- Operation Principle and Circuit Design Issues.- High Density Integration.- Testing and Reliability.- Part IV Advanced-Type Memories: Chain FeRAMs.- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM.- FET-type FeRAMs.- Part V Applications and Future Prospects: Application to Future Information Technology World.- Subject Index.